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| TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS Copyright (c) 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q q q q q 80 W at 25C Case Temperature 7 A Continuous Collector Current 10 A Peak Collector Current Maximum VCE(sat) of 2 V at IC = 5 A ICEX(sus) 7 A at rated V(BR)CEO B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING TIP150 Collector-base voltage (IE = 0) TIP151 TIP152 TIP150 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp 5 ms, duty cycle 10%. 2. Derate linearly to 150C case temperature at the rate of 0.64 W/C. 3. Derate linearly to 150C free air temperature at the rate of 16 mW/C. TIP151 TIP152 V EBO IC ICM IB Ptot Ptot Tj Tstg TL VCEO VCBO SYMBOL VALUE 300 350 400 300 350 400 8 7 10 1.5 80 2 -65 to +150 -65 to +150 260 V A A A W W C C C V V UNIT PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 electrical characteristics at 25C case temperature PARAMETER V (BR)CBO Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter cut-off current Collector-emitter sustaining current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Parallel diode forward voltage Small signal forward current transfer ratio Small signal forward current transfer ratio Output capacitance IC = 1 mA TEST CONDITIONS TIP150 IE = 0 TIP151 TIP152 TIP150 IC = 10 mA (see Note 4) VCE = 300 V V CE = 350 V V CE = 400 V VCLAMP = V(BR)CEO VEB = VCE = V CE = V CE = IB = 8V 5V 5V 5V 10 mA IC = 0 IC = 2.5 A IC = IC = IC = IC = IC = IC = IC = IB = 0 IC = 0.5 A IC = 0.5 A IE = 0 5A 7A 1A 2A 5A 2A 5A (see Notes 4 and 5) (see Notes 4 and 5) f = 1 kHz f = 1 MHz f = 1 MHz 200 10 100 pF (see Notes 4 and 5) (see Notes 4 and 5) 150 50 15 1.5 1.5 2 2.2 2.3 3.5 V V V IB = 0 IB = 0 IB = 0 IB = 0 TIP151 TIP152 TIP150 TIP151 TIP152 7 15 MIN 300 350 400 300 350 400 250 250 250 A mA A V V TYP MAX UNIT V (BR)CEO ICEO ICEX(sus) IEBO hFE VCE(sat) IB = 100 mA IB = 250 mA IB = 100 mA IB = 250 mA IE = VCE = VCE = 7A 5V 5V V BE(sat) VEC hfe |hfe| Cob VCB = 10 V NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC RJA CC Junction to case thermal resistance Junction to free air thermal resistance Thermal capacitance of case 0.9 MIN TYP MAX 1.56 62.5 UNIT C/W C/W J/C inductive-load-switching characteristics at 25C case temperature PARAMETER tsv tsi trv tti txo TEST CONDITIONS MIN TYP 3.9 4.7 MAX UNIT s s s s s Voltage storage time Current storage time Voltage transition time Current transition time Cross-over time IC = 5 A V (clamp) = V(BR)CEO IB(on) = 250 mA RBE = 47 1.2 1.2 2.0 Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT INFORMATION 2 TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION 24 V Vz L = 7 mH Driver and Current Limiting Circuit TUT 100 0.22 F 0.2 Figure 1. Functional Test Circuit 16.6 ms 11.6 ms Input Signal 0 IB Base Current 0 IC Collector Current Collector Emitter Voltage 0 Vclamp 0 24 V Figure 2. Functional Test Waveforms 40 V 0.056 7 mH IRF140 BY205-600 V in = 10 V 1 k TUT Adjust for IB V clamp 47 12 V Figure 3. Switching Test Circuit PRODUCT INFORMATION 3 TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE = 5 V t p = 300 s, duty cycle <2% hFE - Typical DC Current Gain TC = 125C TC = 25C TC = -30C VCE(sat) - Collector-Emitter Saturation Voltage - V 10000 TCD150AA COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 10 IC / IB = 20 tp = 300 s, duty cycle < 2% TCD150AB 1000 1*0 100 TC = 125C TC = 25C TC = -30C 0*1 0*4 1*0 IC - Collector Current - A 10 10 0*4 1*0 IC - Collector Current - A 10 Figure 4. Figure 5. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 3*0 VBE(sat) - Base-Emitter Saturation Voltage - V IC / IB = 20 t p = 300s, duty cycle < 2% 2*5 TCP150AC COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE 1000 VCE = 400 V IB = 0 TCD150AD ICEO - Collector Cut-off Current - A 100 2*0 10 1*5 TC = -30C TC = 25C TC = 125C 1*0 0*4 1*0 IC - Collector Current - A 10 1*0 -50 -25 0 25 50 75 100 125 TC - Case Temperature - C Figure 6. Figure 7. PRODUCT INFORMATION 4 TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAD150AA IC - Collector Current - A 10 1*0 0.1 t p = 0.1 ms tp = 1 ms tp = 5 ms DC Operation 10 0*01 1*0 TIP150 TIP151 TIP152 100 1000 VCE - Collector-Emitter Voltage - V Figure 8. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 100 Ptot - Maximum Power Dissipation - W TID150AA 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 9. PRODUCT INFORMATION 5 TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE PRODUCT INFORMATION 6 TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT INFORMATION 7 |
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